Review on Double-gate MOSFETs- Scaling, Operation, Challenges and Opportunities.

The expansion of VLSI industry has focused on the way to the efficiency of semiconductor devices which is dependent on the advancement in the CMOS technology. As we scale down the device, carrier mobility gets reduced due to dopant fluctuation, gate tunneling effect increases and leakage current increases. More precise structures are required to be developed for satisfying the above requirements. The double-gate Metal Oxide Semiconductor Field-Effect-Transistors control the channel region and most suited for ultra-low-voltage operation. In this paper, the review of double-gate technology, scaling challenges, double-gate structure and operation its challenges and opportunities have been discussed.