12May 2020

OPTIMUM THICKNESS DETERMINATION TECHNIQUE AS APPLIED TO A SERIES VERTICAL JUNCTION SILICON SOLAR CELL UNDER POLYCHROMATIC ILLUMINATION: EFFECT OF IRRADIATION

  • Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
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The study of an n+-p-p+ type silicon solar cell with vertical junction series illuminated by polychromatic light and under irradiation was realized under steady state. The aim of the work is to determine the optimum thickness of this type of solar cell from the expressions of the backsurface recombination velocity(Sb) obtained by calculating the derivative of the photocurrent density (Jph) with respect to the recombination velocity at the junction (Sf) which tends to large values, translating the short circuit situation. Correlations between the optimum thickness, the irradiation energy flow (φp) and the intensity of the damage coefficient (kl) have been established by a mathematical relationship.

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[Omar Dia, Mohamed Abderrahim Ould El Moujtaba, Sega Gueye, Mamadou Lamine Ba, Ibrahima Diatta, Gora Diop, Marcel Sitor Diouf and Gregoire Sissoko (2020); OPTIMUM THICKNESS DETERMINATION TECHNIQUE AS APPLIED TO A SERIES VERTICAL JUNCTION SILICON SOLAR CELL UNDER POLYCHROMATIC ILLUMINATION: EFFECT OF IRRADIATION Int. J. of Adv. Res. 8 (May). 616-626] (ISSN 2320-5407). www.journalijar.com

gsissoko@yahoo.com
university C A D, Dakar Senegal

DOI:

Article DOI: 10.21474/IJAR01/10967      
DOI URL: https://dx.doi.org/10.21474/IJAR01/10967

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